GROWTH-RATE AND SURFACE-MORPHOLOGY OF DIAMOND HOMOEPITAXIAL FILMS ON MISORIENTED(001) SUBSTRATES

Homoepitaxial films were grown on misoriented diamond(001) substrates using microwave plasma-assisted chemical vapor deposition with a metha ne and hydrogen gas mixture. The dependence of growth rate and surface morphology on methane concentration, substrate temperature and off-an gle was investigated. The growth rate dependence was significant for a growth at a high substrate temperature (1000 degrees C) and low metha ne concentration (1%), suggesting the surface migration distance of th e nanometer order. A flat surface was observed macroscopically and mic roscopically for films grown on off-substrates at a high substrate tem perature and low methane concentration.