A CLEAN GAP(001)4X2 C(8X2) SURFACE-STRUCTURE STUDIED BY SCANNING-TUNNELING-MICROSCOPY AND ION-SCATTERING SPECTROSCOPY/

Authors
NAITOH M WATANABE A KONISHI A NISHIGAKI S
Citation
M. Naitoh et al., A CLEAN GAP(001)4X2 C(8X2) SURFACE-STRUCTURE STUDIED BY SCANNING-TUNNELING-MICROSCOPY AND ION-SCATTERING SPECTROSCOPY/, JPN J A P 1, 35(9A), 1996, pp. 4789-4790
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
35
Issue
9A
Year of publication
1996
Pages
4789 - 4790
Database
ISI
SICI code
Abstract
We report the results of scanning tunneling microscopy and ion scatter ing spectroscopy investigation on the structure of GaP(001)4 x 2/c(8 x 2) surfaces prepared by ion bombardment and annealing methods. We fou nd that the unit cell of the 4 x 2 structure consists of two Ga dimers with two dimer vacancies and that the atomic separation in the Ga dim er is about 0.27 +/- 0.01 nm.