In this study the development of residual stress of are deposited Ti f
ilms as a function of the; energy of deposited atoms was investigated.
A comparison with the momentum transfer model for Ti films deposited
under substrate bias indicate that the films are in a region character
ised by momentum values of 50-150 amu(1/2) eV(1/2). The compressive st
ress was found to vary from 1.1 GPa to 0.1 GPa and the range of Ti mic
rohardness was measured to be 6.7-8.7 GPa. The microchardness varied w
ith grain size according the Hall-Fetch relationship. The substrate bi
as was varied and the influence on residual stress, microhardness, pre
ferred orientation, density surface roughness and topography of the de
posited films was investigated. Copyright (C) 1996 Elsevier Science Lt
d