SILICON-OXIDE CONDUCTIVITY OF HYDROGEN-ION IMPLANTED POLYSILICON THIN-FILM TRANSISTORS

The influence of hydrogen ion implantation into the channel polysilico n of polysilicon thin film transistors on gate oxide conductivity has been investigated Data for effective tunnelling barriers at the gate o xide/channel polysilicon interface are presented. A value of 1.2 eV fo r samples with boron doped channel polysilicon is calculated For hydro genated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are im purity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10(17) to 3 x 10(19) cm(-3). Copyright (C) 1996 Elsevier Science Ltd