HOMOGENEOUS CVD ALPHA-SI-H THIN-FILM BASED POSITION-SENSITIVE PHOTODETECTOR

The design, fabrication and characterization of hydrogenated amorphous silicon (alpha-Si:H) position sensitive photodetectors (PSP) are desc ribed. Thin undoped alpha-Si:H films were deposited by homogeneous che mical vapour deposition using thermal decomposition of silane at low g as pressure. The thin films were characterized by their dark and photo conductivity, optical and CPM measurements. The optical band gap, defe ct density and photosensitivity were controlled. The PSP had a Schottk y-type structure, ITO/alpha-Si:H/Pd on a glass substrate and their pos ition characteristics at different light probe intensities were measur ed. Copyright (C) 1996 Elsevier Science Ltd