PROPERTIES OF AMORPHOUS-SILICON CARBIDE FILMS PREPARED BY PECVD

Amorphous SiC was prepared by plasma enhanced chemical vapour depositi on of SiH4 and CH4. The properties of the SiC deposits were studied us ing a combination of infrared (IR), RES, ERD (electron recoiling detec tion) and AES measurement. Infra red spectra showed the presence of Si -C, Si-H and C-H bonds. The compositions of the silicon, carbon and hy drogen in the films were found to be dependent on the preparation cond itions. Copyright (C) 1996 Published by Elsevier Science Ltd