PREPARATION OF BATIO3 THIN-FILMS BY BACKSIDE PULSED ION-BEAM EVAPORATION

Barium titanate (BaTiO3) thin films were successfully prepared in situ on Al/SiO2/Si(100) substrates by backside deposition from intense, pu lsed, ion-beam evaporation using a 1.3 MeV, 50 ns, 25 J/cm(2) ion beam . Good morphology of the films prepared was observed, where no droplet s appear compared to normal frontal-side deposition. The deposition ra tes were typically 100 nm/shot. The films were perovskite polycrystals . The capacitance of the thin films (at 1 kHz) increased from 3 to 10 nF/mm(2) with increasing substrate temperature from 25 to 250 degrees C, respectively. (C) 1996 American Institute of Physics.