TIME-RESOLVED MEASUREMENTS OF THE PHOTOLUMINESCENCE OF CU-QUENCHED POROUS SILICON

We have performed time-resolved photoluminescence measurements in the submicrosecond to microsecond time regime on porous silicon samples un der several diffusion-based chemical treatments with copper ion soluti ons that produce varying crystallite surface conditions. Our results f or short emission wavelengths emanating from high lying states indicat e that Cu acts largely on the population process commencing from the t op of the well at short relaxation time scales immediately after excit ation, and to less extent on the radiating states in the microsecond r egime. (C) 1996 American Institute of Physics.