STRUCTURAL AND OPTICAL-PROPERTIES OF STRAINED (GA,IN)SB GASB QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/

Strained (Ga,In)Sb/GaSb quantum wells were grown by molecular-beam epi taxy which exhibit excellent structural properties as well as intense and narrow photoluminescence transitions. The coincidence of these tra nsitions with resonances in electroreflectance spectra demonstrates th eir intrinsic nature. The spectral position of the emission peak shift s to lower energies with increasing thickness of the quantum well, sho wing that the transitions truly originate from quantum confined states . However, the emission energy is much lower than that calculated in t he frame of the envelope function model when assuming the commonly acc epted parameters for the strained (Ga,In)Sb band gap. We propose that these parameters have to be revised. (C) 1996 American Institute of Ph ysics.