NONLINEAR-OPTICAL MAPPING OF SILICON-CARBIDE POLYTYPES IN GH-SIC EPILAYERS

Authors
MEYER C LUPKE G VONKAMIENSKI ES GOLZ A KURZ H
Citation
C. Meyer et al., NONLINEAR-OPTICAL MAPPING OF SILICON-CARBIDE POLYTYPES IN GH-SIC EPILAYERS, Applied physics letters, 69(15), 1996, pp. 2243-2245
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
15
Year of publication
1996
Pages
2243 - 2245
Database
ISI
SICI code
0003-6951(1996)69:15<2243:NMOSPI>2.0.ZU;2-L
Abstract
A fast and noninvasive mapping tool based on spatially resolved optica l second-harmonic generation is presented for the detection of silicon carbide polytypes in 6H-SiC epilayers. 3C-SiC microcrystallites of di fferent orientations are identified from second-harmonic rotational an isotropy scans. The method reported can be used as an efficient in sit u control of SiC growth processes. (C) 1996 American Institute of Phys ics.