HOLE TRAPS IN OXIDE LAYERS THERMALLY GROWN ON SIC

Hole trapping in the oxides thermally grown on different polytypes of SiC (3C, 4H, 6H) was studied using photogeneration of charge carriers in SiO2 and electron-spin-resonance spectroscopy. Oxygen vacancy defec ts were found to be the dominant hole traps in the oxide. Generation o f thermally unstable SiC/SiO2 interface states is observed during hole injection, which resembles creation of hydrogen-related states at the Si/SiO2 interface. (C) 1996 American Institute of Physics.