J. Lee et al., SPECTROELLIPSOMETRY FOR CHARACTERIZATION OF ZN1-XCDXSE MULTILAYERED STRUCTURES ON GAAS, Applied physics letters, 69(15), 1996, pp. 2273-2275
The dielectric functions of 0.5-1.5-mu m-thick Zn1-xCdxSe (0 less than
or equal to x less than or equal to 0.34) epilayers on (100) GaAs wer
e measured by spectroellipsometry (SE) over the photon energy range 1.
5 less than or equal to E less than or equal to 5.3 eV. These spectra
were parameterized using the Sellmeier and Lorentz equations for photo
n energies below and above the fundamental gap region, respectively. W
e have demonstrated the usefulness of this parameterization in analyse
s of SE data collected on a ZnSe heterostructure and a Zn1-xCdxSe quan
tum well that provide accurate layer thicknesses and compositions. (C)
1996 American Institute of Physics.