SPECTROELLIPSOMETRY FOR CHARACTERIZATION OF ZN1-XCDXSE MULTILAYERED STRUCTURES ON GAAS

The dielectric functions of 0.5-1.5-mu m-thick Zn1-xCdxSe (0 less than or equal to x less than or equal to 0.34) epilayers on (100) GaAs wer e measured by spectroellipsometry (SE) over the photon energy range 1. 5 less than or equal to E less than or equal to 5.3 eV. These spectra were parameterized using the Sellmeier and Lorentz equations for photo n energies below and above the fundamental gap region, respectively. W e have demonstrated the usefulness of this parameterization in analyse s of SE data collected on a ZnSe heterostructure and a Zn1-xCdxSe quan tum well that provide accurate layer thicknesses and compositions. (C) 1996 American Institute of Physics.