ULTRAFAST DYNAMICS OF ELECTRONIC EXCITATIONS IN SEMICONDUCTORS

Citation
T. Elsaesser et al., ULTRAFAST DYNAMICS OF ELECTRONIC EXCITATIONS IN SEMICONDUCTORS, Progress in crystal growth and characterization of materials, 33(1-3), 1996, pp. 41-48
Citations number
14
Categorie Soggetti
Crystallography,"Materials Science, Characterization & Testing
ISSN journal
09608974
Volume
33
Issue
1-3
Year of publication
1996
Pages
41 - 48
Database
ISI
SICI code
0960-8974(1996)33:1-3<41:UDOEEI>2.0.ZU;2-K
Abstract
Coherent nonlinear polarizations and non-equilibrium distributions of hot electrons are studied in femtosecond experiments with bulk GaAs. B oth excitonic and free-carrier components contribute to the third-orde r polarization close to the bandgap and show a distinctly different ti me behavior. Phase relaxation during the femtosecond photogeneration p rocess leads to a significant broadening of the initial carrier distri bution in comparison to the power spectrum of the optical pulses. The experimental results are in excellent agreement with a Monte Carlo sol ution of the semiconductor Bloch equations.