SIMULATION OF RECOMBINATION PUMPED ALUMINUM SOFT-X-RAY LASER

Citation
Cj. Zhu et al., SIMULATION OF RECOMBINATION PUMPED ALUMINUM SOFT-X-RAY LASER, Progress in crystal growth and characterization of materials, 33(1-3), 1996, pp. 285-288
Citations number
10
Categorie Soggetti
Crystallography,"Materials Science, Characterization & Testing
ISSN journal
09608974
Volume
33
Issue
1-3
Year of publication
1996
Pages
285 - 288
Database
ISI
SICI code
0960-8974(1996)33:1-3<285:SORPAS>2.0.ZU;2-O
Abstract
Extensive studies of simulation of recombination pumped Aluminum soft X-ray lasers scheme have been performed. Gain is observed for the H-li ke n=3-2 and He-like n=4-3 transition. It is shown that with shorter p ulse driving lasers, gain increases. The dependence of gain on the dri ving laser pulse width is explained by the relation of electron temper ature, electron density and ion ground state population with three bod y recombination process. Agreement is achieved between simulation and experiment for population inversions between the He-Like Al n=4-3 leve ls.