Cj. Zhu et al., SIMULATION OF RECOMBINATION PUMPED ALUMINUM SOFT-X-RAY LASER, Progress in crystal growth and characterization of materials, 33(1-3), 1996, pp. 285-288
Extensive studies of simulation of recombination pumped Aluminum soft
X-ray lasers scheme have been performed. Gain is observed for the H-li
ke n=3-2 and He-like n=4-3 transition. It is shown that with shorter p
ulse driving lasers, gain increases. The dependence of gain on the dri
ving laser pulse width is explained by the relation of electron temper
ature, electron density and ion ground state population with three bod
y recombination process. Agreement is achieved between simulation and
experiment for population inversions between the He-Like Al n=4-3 leve
ls.