We developed and evaluated a new partially ionized beam (PIB) source t
o deposit high quality Cu films. The novelty of the PIB source lies in
the fact that the crucible and ionization parts are spaced in one cyl
indrical shell to make its structure compact and to get a uniform beam
profile, but their electric circuits are not separated. In this artic
le, we report the characteristics of the PIB source, such as voltage-a
mpere characteristics of the crucible and ionization parts, Cu+ ion be
am uniformity with a change of the ionization currents, and deposition
rate. (C) 1996 American Institute of Physics.