USE OF CARBONITRIDE FILM AS BUFFER LAYER FOR CVD DIAMOND NUCLEATION

Citation
P. Karve et al., USE OF CARBONITRIDE FILM AS BUFFER LAYER FOR CVD DIAMOND NUCLEATION, DIAMOND AND RELATED MATERIALS, 5(12), 1996, pp. 1527-1531
Citations number
19
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
5
Issue
12
Year of publication
1996
Pages
1527 - 1531
Database
ISI
SICI code
0925-9635(1996)5:12<1527:UOCFAB>2.0.ZU;2-G
Abstract
Enhanced nucleation of polycrystalline diamond has been achieved on Si (100) with an intermediate layer of carbonitride. The carbonitride fil m was formed by an ion beam assisted deposition method and was charact erized by Rutherford backscattering, X-ray photoelectron and laser Ram an spectroscopies. The diamond deposition was accomplished using a hot filament chemical vapor deposition technique. Diamond him quality was examined with the help of laser Raman spectroscopy and scanning elect ron microscopy.