We have developed novel analytical methods to predict laser-induced, n
on-linear thermal effects in semiconductors. Equations based on energy
balance considerations were used for the estimation of melt depths, s
urface temperatures and maximum solidification velocities of semicondu
ctors exposed to nanosecond laser pulses. The effect of laser pulse du
ration and fluence on these parameters was displayed graphically. Anal
ytical results were compared with detailed numerical solutions and exp
erimental values where available. Good agreement between analytical an
d numerical calculations was observed, thus suggesting the universal a
pplication of this method to the estimation of non-linear thermal effe
cts of laser-irradiated materials.