DC-ELECTRIC-FIELD-INDUCED 2ND-HARMONIC GENERATION STUDIES OF SURFACESAND BURIED INTERFACES OF COLUMN-IV SEMICONDUCTORS

This article presents the first attempt to review the recent achieveme nts in the progress of the new experimental nonlinear optical techniqu e of studying surface and interfaces of centrosymmetric semiconductors . This novel method is based on discovered in 60's phenomenon of the d c-electric-field-induced optical second-harmonic generation (EISHG) at semiconductor (metal)-electrolyte interfaces that manifests itself in the modulation of the optical second-harmonic generation (SHG) intens ity by a dc electric field applied to the surface or interface. In thi s paper we will present our recent results of experimental and theoret ical studies of the EISHG phenomenon in the Si-SiO2-Cr MOS structures. The systematic phenomenological description of EISHG consisting of de tail electrophysical model of the space charge region (SCR) at the sem iconductor-dielectric interface and rigorous nonlinear optical model o f EISHG in SCR is presented also.