MULTIWAVELENGTH RAMAN PROBING OF PHOSPHORUS IMPLANTED SILICON-WAFERS

Raman spectroscopy is performed on phosphorus implanted silicon wafers with several excitation laser wavelengths ranging from 458 nm to 752. 5 nm. The silicon layers were implanted with various implantation ener gies and doses, ranging below and over the critical dose of amorphizat ion. A factor kappa, relating the Raman intensity of the implanted sam ples with that of the pure crystalline silicon is introduced, and used ro correlate the effects of ion implantation at different doses, diff erent implantation energies and various annealing temperatures, on the silicon lattice.