QUANTITATIVE PREDICTION OF ACCEPTOR CONCENTRATION REDUCTION IN BORON-DOPED SILICON DUE TO ELECTRON-IRRADIATION

Authors
EVERAERT JL VERHAEGEN F VANMEIRHAEGHE RL UYTTENHOVE J CARDON F
Citation
Jl. Everaert et al., QUANTITATIVE PREDICTION OF ACCEPTOR CONCENTRATION REDUCTION IN BORON-DOPED SILICON DUE TO ELECTRON-IRRADIATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 117(4), 1996, pp. 397-402
Citations number
16
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
117
Issue
4
Year of publication
1996
Pages
397 - 402
Database
ISI
SICI code
0168-583X(1996)117:4<397:QPOACR>2.0.ZU;2-8
Abstract
The reduction in acceptor concentration due to electron irradiation is determined from C-V characteristics of TixSiy/p-Si Schottky barrier d iodes. By using the concept of displacement dose, a method for predict ing the reduction in acceptor concentration is successfully applied fo r an arbitrary primary electron energy ranging from 4 to 14 MeV.