GENERAL TECHNIQUE FOR FABRICATING LARGE ARRAYS OF NANOWIRES

Large arrays of parallel metallic nanowires ranging from 20-120 nm in width are fabricated using a general and relatively simple technique. Holographic laser interference exposure of photoresist and anisotropic etching are used to pattern the surface of InP(001) substrates into V -shaped grooves of 200 nm period. Subsequently metal is evaporated at an angle onto the V-grooved substrates, naturally resulting in thousan ds of ultra-narrow metallic wires in parallel. Resistance measurements proof that as-prepared wires are electrically continuous.