The authors present a 1.8GHz class E power amplifier for wireless comm
unications. A fully integrated class E power amplifier module was desi
gned, fabricated and tested. The circuit was implemented in a self-ali
gned-gate, depletion mode 0.8 mu m GaAs MESFET process. The amplifier
delivers 23dBm of power to the 50 Ohm load, with a power added efficie
ncy of 57% at a supply voltage of 2.4V.