BFET - A COMPOSITE BIPOLAR AND FET TRANSISTOR

Authors
VOO TF TOUMAZOU C
Citation
Tf. Voo et C. Toumazou, BFET - A COMPOSITE BIPOLAR AND FET TRANSISTOR, Electronics Letters, 32(20), 1996, pp. 1926-1928
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
20
Year of publication
1996
Pages
1926 - 1928
Database
ISI
SICI code
0013-5194(1996)32:20<1926:B-ACBA>2.0.ZU;2-4
Abstract
The authors describe a new structure which uses the MOSFET and bipolar transistor to construct a device which has large g(m), the logarithmi c high dynamic rang of the BJT, and the high input impedance of the MO SFET.