HIGH-VOLTAGE (450 V) 6H-SIC LATERAL MESFET STRUCTURE

A high voltage 6H-SiC lateral MESFET has been fabricated using a three mask process. Selective ion implantation was used to create the condu cting layer (N-region) demonstrating the RESURF effect in SiC for firs t time, as well as easy isolation and edge termination. This MESFET wa s able to withstand a forward blocking voltage of 450 V at a gate volt age of -20 V. The specific on-resistance and transconductance for a de vice with a drain gate separation of 15 mu m was found to be 83 m Omeg a cm(2) and 2mS/mm respectively.