TYPE-II INTERFACE EXCITON IN ZNSE (ZN,MN)SE HETEROSTRUCTURES/

Citation
Vv. Rossin et al., TYPE-II INTERFACE EXCITON IN ZNSE (ZN,MN)SE HETEROSTRUCTURES/, Physical review. B, Condensed matter, 54(11), 1996, pp. 7682-7685
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
54
Issue
11
Year of publication
1996
Pages
7682 - 7685
Database
ISI
SICI code
0163-1829(1996)54:11<7682:TIEIZ(>2.0.ZU;2-1
Abstract
Two emission bands are observed in the photoluminescence spectrum of Z nSe/(Zn,Mn)Se heterostructures. These bands emerge in a magnetic field and are associated with interface excitons formed as a result of a ma gnetic-field-induced type-I-type-II transition of the band alignment. Time-resolved measurements yield lifelines in the ns range signifying a relatively large spatial separation of electrons and holes and hence low optical oscillator strength. These features are confirmed by a th eoretical analysis of the interface exciton state revealing a reduced importance of the electron-hole Coulomb interaction in comparison with type-II excitons in quantum wells.