Kz. Zhang et al., SI 2P CORE-LEVEL SHIFTS AT THE SI(100)-SIO2 INTERFACE - AN EXPERIMENTAL-STUDY, Physical review. B, Condensed matter, 54(11), 1996, pp. 7686-7689
Si 2p core-level shifts are measured for a model system generated from
HSi(OCH2CH2)(3)N 3nd Si(100)-2x1 and compared to the result obtained
from a species containing similar coordination about silicon, HSi(OCH3
)(3). The dramatic difference in the products obtained is explained in
terms of the chelate effect. The results are compared to previous res
ults obtained using spherosiloxane clusters and an empirical, model-co
mpound-based core-level shift assignment scheme is compared and contra
sted with the conventional formal oxidation state assignment scheme.