SI 2P CORE-LEVEL SHIFTS AT THE SI(100)-SIO2 INTERFACE - AN EXPERIMENTAL-STUDY

Citation
Kz. Zhang et al., SI 2P CORE-LEVEL SHIFTS AT THE SI(100)-SIO2 INTERFACE - AN EXPERIMENTAL-STUDY, Physical review. B, Condensed matter, 54(11), 1996, pp. 7686-7689
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
54
Issue
11
Year of publication
1996
Pages
7686 - 7689
Database
ISI
SICI code
0163-1829(1996)54:11<7686:S2CSAT>2.0.ZU;2-R
Abstract
Si 2p core-level shifts are measured for a model system generated from HSi(OCH2CH2)(3)N 3nd Si(100)-2x1 and compared to the result obtained from a species containing similar coordination about silicon, HSi(OCH3 )(3). The dramatic difference in the products obtained is explained in terms of the chelate effect. The results are compared to previous res ults obtained using spherosiloxane clusters and an empirical, model-co mpound-based core-level shift assignment scheme is compared and contra sted with the conventional formal oxidation state assignment scheme.