ELECTRIC AND MAGNETIC DIPOLE 2-PHOTON ABSORPTION IN SEMICONDUCTORS

Citation
Js. Michaelis et al., ELECTRIC AND MAGNETIC DIPOLE 2-PHOTON ABSORPTION IN SEMICONDUCTORS, Physical review. B, Condensed matter, 54(11), 1996, pp. 7917-7920
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
54
Issue
11
Year of publication
1996
Pages
7917 - 7920
Database
ISI
SICI code
0163-1829(1996)54:11<7917:EAMD2A>2.0.ZU;2-N
Abstract
Nonlinear spectroscopy of the exciton fine structure in GaAs has allow ed us to measure simultaneously both magnetic dipole two-photon absorp tion and electric dipole one-photon absorption. The splitting of the e xcitonic ground state into the spin-allowed orthoexciton and the spin- forbidden paraexciton gives the electron-hole exchange energy directly . The peak assignment is proved by nonlinear magnetoabsorption. Utiliz ing electric dipole two-photon magnetoabsorption within the same exper iment, a rich fine structure of the 2P exciton has been observed that has not been previously resolved.