LOW-TEMPERATURE MAGNETORESISTANCE OF GAAS ALGAAS CORRUGATED-GATE WIRES/

We study quantum interference effects which are observed in the low te mperature magnetoresistance of corrugated-gate wires fabricated in the GaAs/AlGaAs modulation-doped heterostructure system. Negative magneto resistance, which appears over a large range of magnetic field, is obs erved. Ln addition, small oscillations in the magnetoresistance are ob served. We believe these results are caused by boundary (or geometry-i nduced) scattering, within the gated wire, which evolves as the nature of the system changes from a quantum-dot array to a wire with weak mo dulation. (C) 1996 Academic Press Limited