NUMERICAL MODELING OF SILICON QUANTUM DOTS

We have developed a numerical approach to calculate the confining pote ntial and charge profiles in silicon quantum dots. We use a 3D general ization of the strongly implicit procedure for the Poisson equation. T he efficient difference approximation, proposed by Scharfetter and Gum mel, was extended to 3D for the continuity equation. To reduce the com putation time and storage requirements, an adaptive non-uniform mesh w as adopted. (C) 1996 Academic Press Limited