A lithographic technique, employing the vibrating tip of an atomic for
ce microscope to mechanically pattern various materials such as photor
esist, metals or semiconductors in the nanometre regime has been devel
oped. We use this technique for the fabrication of etch masks as well
as for the patterning of evaporation shadow masks. The tip quality has
been found to be a crucial factor in the lithographic resolution. We
therefore use ultra hard, amorphous carbon tips, which are prepared by
electron beam deposition in an electron microscope. With these tips,
additionally sharpened in an oxygen plasma, we now succeed in fabricat
ing hole arrays with periods in the 10 nm regime. These hole arrays ar
e transferred to the electron system of a GaAs-AlGaAs heterostructure,
and the magneto resistance of such fabricated antidot arrays is discu
ssed. (C) 1996 Academic Press Limited