THE X-RAY-ENERGY RESPONSE OF SILICON .B. MEASUREMENTS

In this, the second part of a detailed study of the interaction of sof t X-rays with silicon, we summarise the results of a large number of e xperiments on charge coupled devices (CCDs), carried out both in our l aboratory and at the Daresbury Synchrotron Radiation Source (SRS). Mea surements of the energy variation of the W parameter and of the Fano f actor F are in substantial agreement with the predictions of the model developed in Part (A) of the study [G.W. Fraser et al., Nucl. Instr. and Meth. A 350 (1994) 368]. The consequences of using a Gaussian puls e height distribution model in the experimental determination of F are discussed. Variations in X-ray event morphology (i.e. the frequency d istribution of single-, two-, three-pixel events) across the silicon K edge are described. Measurements of CCD quantum detection efficiency Q (counts/photon) showing XAFS (X-ray absorption fine structure) modul ation in the vicinity of the Si K edge are compared with calculations based upon new, experimentally-determined linear absorption coefficien ts for Si, SiO2 and Si3N4. Finally, the X-ray photoyield from silicon is described, both experimentally and theoretically.