MICROWAVE COMPLEX CONDUCTIVITY OF GAPPED STATE IN CENISN

Citation
T. Shibauchi et al., MICROWAVE COMPLEX CONDUCTIVITY OF GAPPED STATE IN CENISN, Czechoslovak journal of Physics, 46, 1996, pp. 2001-2002
Citations number
5
Categorie Soggetti
Physics
ISSN journal
00114626
Volume
46
Year of publication
1996
Supplement
4
Pages
2001 - 2002
Database
ISI
SICI code
0011-4626(1996)46:<2001:MCCOGS>2.0.ZU;2-3
Abstract
The temperature dependence of the microwave complex conductivity sigma (T) = sigma(1)(T) - i sigma(2)(T) was determined at 9.6 and 14 GHz in a single crystal of CeNiSn from the surface impedance measurements. Be low about 10 K the real part sigma(1) is suppressed in comparison with the de conductivity and the imaginary part sigma(2) increases rapidly . These results indicate a rapid decrease of scattering of quasipartic les, whose excitation spectrum is drastically changed from the heavy-f ermion to a gapped state at low temperatures.