Yv. Sushko et al., PRESSURE EFFECT ON THE GMR MATERIAL TL2MN2O7 WITH THE PYROCHLORE STRUCTURE, Czechoslovak journal of Physics, 46, 1996, pp. 2003-2004
The influence of hydrostatic pressure on the magnetic and electronic p
roperties of a new class of manganese oxide-based giant magnetoresista
nce (GMR) materials, represented by electron-doped Tl2Mn2O7, has been
studied. It was found in this study, that the applied pressure causes
the Curie temperature T-c of Tl2Mn2O7 to decrease at a modest rate of
-1.6K/GPa. Negative pressure coefficient dTc/dP=-0.4 K/GPa was observe
d for an isostructural insulator In2Mn2O7 as well. The results, togeth
er with the temperature dependent multiple changes of the sign of the
pressure coefficient of resistivity d rho/nP, are in sharp contrast wi
th the case of the perovskite GMR oxides, where strong positive effect
of pressure on both the T-c and conductivity was reported in agreemen
t with a double exchange theory.