PERSISTENT CURRENT IN MESOSCOPIC SEMICONDUCTOR RINGS AT EXTREMELY LOW-TEMPERATURES - A 2-BAND MODEL

Citation
Y. Wang et al., PERSISTENT CURRENT IN MESOSCOPIC SEMICONDUCTOR RINGS AT EXTREMELY LOW-TEMPERATURES - A 2-BAND MODEL, Czechoslovak journal of Physics, 46, 1996, pp. 2423-2424
Citations number
4
Categorie Soggetti
Physics
ISSN journal
00114626
Volume
46
Year of publication
1996
Supplement
4
Pages
2423 - 2424
Database
ISI
SICI code
0011-4626(1996)46:<2423:PCIMSR>2.0.ZU;2-G
Abstract
In the framework of the two-band model, we calculate the persistent cu rrent I for mesoscopic semiconductor rings determined from the Aharono v-Bohm effect (AB) at zero temperature. This current is periodic in Ph i with the periodicity of Phi(0) = hc/e. In particular, it is indicate d that the interband coupling enhances the current while the impurity suppresses the current. More intriguingly, it has also been shown that there exists the spontaneous AB flux for a clean ring with even numbe r of electrons; while for a dirty ring with odd number of electrons.