We have measured SIS quasiparticle tunneling in YBaCuO/PrBaCuO/YBaCuO
trilayers. The heterostructures were realized on SrTiO3 substrates, by
sequential deposition of high quality (001) oriented epitaxial films,
using a high pressure de sputtering in pure oxygen plasma. The YBaCuO
films show a zero resistance and a diamagnetic transition temperature
at 91 K, while the PrBaCuO barrier exhibits a semiconducting behavior
. Conductance characteristics vs. voltage, at low biases, show well de
veloped peaks indicative of gap structures at +/-45 mV, a flat backgro
und conductance for voltage greater than 50 mV and a ratio smaller tha
n 0.1 between zero bias and normal state conductance.