PHYSICAL-PROPERTIES OF HTSC - PHOTOSEMICONDUCTOR HYBRID CONTACT STRUCTURES

Authors
BUNDA VV BUNDA S KRIVSKY V BUTORIN A ZIHIKA V
Citation
Vv. Bunda et al., PHYSICAL-PROPERTIES OF HTSC - PHOTOSEMICONDUCTOR HYBRID CONTACT STRUCTURES, Czechoslovak journal of Physics, 46, 1996, pp. 1361-1362
Citations number
4
Categorie Soggetti
Physics
Journal title
Czechoslovak journal of Physics → ACNP
ISSN journal
00114626
Volume
46
Year of publication
1996
Supplement
3
Pages
1361 - 1362
Database
ISI
SICI code
0011-4626(1996)46:<1361:POH-PH>2.0.ZU;2-3
Abstract
The electrophysical properties of tunneling-, proximity- and combined types of ''HTSC - photosemiconductor'' hybrid contact structures have been studied. The features of the temperature dependent behavior of th e resistance around the superconducting phase transition (T-c) are dis cussed. Models are proposed.