BIAXIALLY ALIGNED YSZ BUFFER LAYERS FOR YBCO TAPES ON TECHNICAL SUBSTRATES WITH ION-BEAM-ASSISTED PULSED-LASER DEPOSITION AND IN-SITU RHEEDTEXTURE ANALYSIS

Biaxially oriented YSZ buffer layers were grown at room temperature by IBALD (Ion-Beam Assisted Laser Deposition) on polycrystalline and amo rphous substrates. Dependent on deposition parameters, the films showe d in-plane orientations of up to 20 degrees FWHM. Film growth at room temperature without assisting ion-beam was polycrystalline with a grow th-rate dependent preferred orientation. (011)- and (001)-oriented fil ms were obtained for growth rates of 10 and 14 Angstrom/s, respectivel y. The YSZ film growth with and without ion-beam bombardment was monit ored in situ with a RHEED-system. The degree of in-plane orientation o f the film surface with growing film thickness was observed with respe ct to the influence of the ion-beam on film texture. A quantitative an alysis of the in-plane orientation was established.