THE METAL-INSULATOR-TRANSITION IN RANDOM AL-GE FILMS

Electronic transport properties have been measured on 3500 Angstrom 'r andom' Al-Ge films. The room temperature resistivity exhibits a sharp discontinuous jump at the metal-insulator transition at the critical m etallic fraction, phi(c) = 8.8 vol% Al. A new procedure is described f or extracting values for the zero temperature conductivity sigma(0) fr om the metallic low temperature conductivity data. When sigma(0) is ex trapolated to zero as a function of Al content, the value obtained for the critical aluminum fraction phi(c) is in good agreement with the r oom temperature value.