A NEW CRITICAL-POINT IN THE NONLINEAR CONDUCTIVITY DUE TO VARIABLE-RANGE-HOPPING IN SI

Authors
STEFANYI P ZAMMIT CC FOZOONI P LEA MJ ENSELL G
Citation
P. Stefanyi et al., A NEW CRITICAL-POINT IN THE NONLINEAR CONDUCTIVITY DUE TO VARIABLE-RANGE-HOPPING IN SI, Czechoslovak journal of Physics, 46, 1996, pp. 2433-2434
Citations number
3
Categorie Soggetti
Physics
Journal title
Czechoslovak journal of Physics → ACNP
ISSN journal
00114626
Volume
46
Year of publication
1996
Supplement
5
Pages
2433 - 2434
Database
ISI
SICI code
0011-4626(1996)46:<2433:ANCITN>2.0.ZU;2-O
Abstract
A critical point in the non-linear conductivity has been observed in e pitaxial silicon in the variable range hopping regime, due to a negati ve differential resistance with a de bias current I-dC. This gives the rmal breakdown via the electron-phonon coupling and circuit-limited os cillations with a frequency f proportional to I-dc, below a critical t emperature T-C. This critical behaviour is intrinsic, and for R(T) = R (0) exp(T-0/T)(1/2) we show that T-C = 0.00512 T-0.