CROSSOVER FROM MOTT TO EFROS-SHKLOVSKII VARIABLE-RANGE-HOPPING IN SI-P

Authors
HORNUNG M LOHNEYSEN HV
Citation
M. Hornung et Hv. Lohneysen, CROSSOVER FROM MOTT TO EFROS-SHKLOVSKII VARIABLE-RANGE-HOPPING IN SI-P, Czechoslovak journal of Physics, 46, 1996, pp. 2437-2438
Citations number
11
Categorie Soggetti
Physics
Journal title
Czechoslovak journal of Physics → ACNP
ISSN journal
00114626
Volume
46
Year of publication
1996
Supplement
5
Pages
2437 - 2438
Database
ISI
SICI code
0011-4626(1996)46:<2437:CFMTEV>2.0.ZU;2-R
Abstract
The low-temperature conductivity of uncompensated insulating Si:P with P concentration just below the metal-insulator (MI) transition shows with decreasing N a crossover from Mott variable range hopping (VRH) t o Efros-Shklovskii VRH. From the concentration dependence of the Mott temperature T-M a correlation-length exponent nu = 1.1 is obtained whi ch is compatible with the conductivity exponent mu = 1.3 for metallic samples.