C. Lauinger et al., THERMOELECTRIC-POWER OF AMORPHOUS-ALLOYS NEAR THE METAL-INSULATOR-TRANSITION, Czechoslovak journal of Physics, 46, 1996, pp. 2443-2444
The thermoelectric power S and the electrical conductivity a of amorph
ous AuxSb100-x and CuxSb100-x films have been measured in the temperat
ure range between about 2 K and 350 K for concentrations close to tile
metal-insulator transition. In both systems the transition occurs at
a critical concentration x(c) approximate to 8 at.% noble metal conten
t. A characteristic feature of the transition is in both cases a stron
g increase of the low temperature slope of the thermopower, i.e. S/T\(
T --> 0), when approaching x(c), from the metallic side. The results a
re compared with different theoretical predictions for the metal-insul
ator transition. Furthermore we report on the changes of S and sigma d
uring annealing. It will be shown that especially S(T) of the samples
with x close to x(c) depends strongly on the annealing state of the fi
lms.