S. Marnieros et al., TRANSPORT-PROPERTIES OF NB-SI ANDERSON INSULATOR THIN-FILMS IN THE MKREGION, Czechoslovak journal of Physics, 46, 1996, pp. 2445-2446
Transport properties of the Anderson insulator NbxSi1-x have been stud
ied on thin films down to 10 mK. We observe crossovers between differe
nt variable range hopping regimes in the 10mK-1K range. The analysis o
f the non linear I-V characteristics gives us informations about the e
lectron-phonon coupling in such systems.