LOW-TEMPERATURE ELECTRON-TRANSPORT IN SI WITH AN MBE GROWN DELTA-LESS-THAN-SB-GREATER-THAN-LAYER

The temperature alteration of the kinetic electron characteristics (co nductivity, Hall coefficient, magnetic field dependences of resistivit y) of Si crystals containing gamma < Sb >-layers with various Sb atom concentrations N-Sb has been studied in the range 1.6-300 K. It was re vealed that at low temperatures the properties of such a system are sp ecified by the delta-layer itself. The temperature dependence of the e lectronic characteristics of low resistance samples (N-Sb = (1 divided by 3). 10(14) cm(-2)) is due to quantum interference effects (effects of electron weak localization (WL) and electron-electron interaction (EEI)) in the two-dimensional system, and those of high resistance (N- Sb = (5 divided by 10). 10(12) cm(-2)) to hopping conductivity mechani sms. In the higher temperature range their behaviour is described by t he properties of the doped semiconductor.