WEAK-LOCALIZATION AND INTERACTION OF ELECTRONS IN MBE DELTA-LESS-THAN-SB-GREATER-THAN-LAYERS IN SI

Temperature (1.6 - 20 K) and magnetic field (up to 2.5 T) dependences of quantum corrections to the conductivity and Hall coefficient of Si epitaxial films containing a delta < Sb >-layer of different sheet den sity N-Sb are studied. The quantum corrections are due to the effects of electron weak localization (WL) and electron-electron interaction ( EEI). Analysis of the quantum corrections made it possible to determin e the temperature dependence of electron phase relaxation time tau(phi ), the spin-orbit interaction time tau(so) and the screening factor F. It is found that the dependence tau(phi)(T) is determined by the elec tron-electron scattering processes, tau(phi) proportional to T--p with p approximate to 1, and an increase in the parameter F with decreasin g electron concentration n in the delta-layer is related to the specif ic features of the screening processes in two-dimensional electron sys tems.