EFFECT OF THE INTERFERENCE BETWEEN ELECTRON-PHONON AND ELECTRON-IMPURITY (BOUNDARY) SCATTERING ON RESISTIVITY NB, AL, BE FILMS

The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Gruneisen term and the term originating from the interference between electron-phonon and electro n-impurity scattering. Study of the transport interference phenomena a llows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T-2 and also to the residual resi stivity and dominates over the Bloch-Gruneisen term at low temperature s (T<40 K).