MAGNETOTRANSPORT EFFECTS IN P-GAAS ALGAAS QUANTIZED STRUCTURES UNDER UNIAXIAL-STRESS/

Quantum oscillations of magnetoresistance and quantum Hall effect have been investigated in (001) p-GaAs/Al0.5Ga0.5As single and double hete rostructures under uniaxial compression up to P=3.2kBar. In asymmetric triangular quantum well (QW) at single heterointerface application of uniaxial compression in [110] direction results in redistribution of carriers between two spin splitted subbands of the heavy hole ground s tate. Approximately 2.5 times decrease of subband splitting in zero ma gnetic field is estimated at P=2.5kBar from carrier concentration and effective mass measurements. The effect of stress is different for app roximately square QW.