Integrated electron spin resonance is used to monitor the magnetic pro
perties of the electron spin in a sample of NTD Ge,using temperatures
down to 40 mK and uniaxial stresses up to 0.36 GPa. The sample density
is just below the critical density at ambient stress for the metal-no
n-metal transition The electron spin susceptibility under stress shows
no temperature variation; a small broadening as T is lowered is match
ed by a similar decrease of intensity. Further,< 110 > uniaxial stress
enhances the intensity of the esr line. The contrast with Si:P is dis
cussed. A large 'stress-tuning' effect is inferred.