N. Terada et al., IN-SITU CHARACTERIZATION OF DOPING-EFFECT ON ELECTRONIC-STRUCTURE OF EPITAXIAL-FILMS OF INFINITE-LAYER SRCUO2, Czechoslovak journal of Physics, 46, 1996, pp. 2683-2684
Change of electronic structure of infinite-layer SrCuO2 epitaxial film
with both hole- and electron-doping has been studied by in-situ photo
emission spectroscopy. In both of the cases, semiconducting gap in the
vicinity of the stoichiometric compound has been vanished by ''light-
doping.'' By further introductions of carriers, monotonous shifts of c
ore-binding energies have been observed; the shift toward lower bindin
g-energy region by the hole-doping, and that toward higher side by the
electron-doping, Total amount of the shift over the whole range of th
e doping was much smaller than the semiconducting gap. For the metalli
c regions, comparison between the energy-shift observed and that expec
ted by a calculation under local-density-approximation is discussed.