ELECTRONS SCATTERING PROCESSES IN AL-GA DILUTE ALLOYS UNDER LOW-TEMPERATURE PLASTIC-DEFORMATION

Single crystal Al-Ga alloys with RRR in the range 7800-2100 were studi ed in temperature region 4.2-40 K and in magnetic fields up to 8T. Fro m the data obtained the contributions to electrical resistivity and ma gnetoresistance of the alloys by lattice defects, which are introduced in the alloy during low-temperature plastic deformation, were analyze d. The analysis of electron-point defect and electron-dislocation scat tering mechanisms evidenced the anisotropic character of the last one in strong magnetic fields.