PREPARATION AND CHARACTERIZATION OF AL AL2O3/CU SIN TUNNEL-JUNCTIONS MICROFABRICATED WITH A FULL WAFER PROCESS/

Authors
CASTLE JP CUNNINGHAM MF NEUHAUSER B GOLWALA S LIPSCHULTZ FP BAROOTKOOB A DRURY OB FRANK M JOCHUM J LABOV SE MEARS CA SADOULET B SLEPOY A YALE DA
Citation
Jp. Castle et al., PREPARATION AND CHARACTERIZATION OF AL AL2O3/CU SIN TUNNEL-JUNCTIONS MICROFABRICATED WITH A FULL WAFER PROCESS/, Czechoslovak journal of Physics, 46, 1996, pp. 2897-2898
Citations number
3
Categorie Soggetti
Physics
Journal title
Czechoslovak journal of Physics → ACNP
ISSN journal
00114626
Volume
46
Year of publication
1996
Supplement
5
Pages
2897 - 2898
Database
ISI
SICI code
0011-4626(1996)46:<2897:PACOAA>2.0.ZU;2-P
Abstract
We have developed a ''full wafer'' process for producing Al/Al2O3/Cu s uperconductor-insulator-normal (SIN) tunnel junctions for use as X-ray and phonon sensors. We describe microfabrication details and present I-V data.